BSC050N03LSGATMA1 vs BSC0906NSATMA1 Comparison

Detailed side-by-side comparison of BSC050N03LSGATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC050N03LSGATMA1

BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon

BSC050N03LSGATMA1 βœ“ Active
Infineon
BSC0906NSATMA1

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC050N03LSGATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.48
Manufacturer Infineon Technologies β€”
Part Number BSC050N03LSGATMA1 β€”
Technology OptiMOS 3 (N-channel trench MOSFET) OptiMOS
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at Tc 80 A 63 A
Continuous Drain Current (ID) at Ta 18 A 18 A
On-State Resistance (RDS(on)) Max at VGS=10V 5 mOhm β€”
Power Dissipation (PD) at Tc 50 W β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typ/min/max]
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C -55C to +150C (junction, typical)
Channel Type N-Channel β€”
RoHS Status Compliant Compliant
MSL Level 1 β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 30 V
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 30 W
RDS(on) max (typical reference) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg @ VGS=10V]
Pin Count β€” 8

Datasheets & Resources

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