BSC052N08NS5ATMA1 vs BSC015NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC015NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC052N08NS5ATMA1 BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 βœ“ Active
Infineon
BSC015NE2LS5IATMA1 BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon

BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon

BSC015NE2LS5IATMA1 βœ“ Active

Specification Comparison

Parameter BSC052N08NS5ATMA1 BSC015NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.69
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC052N08NS5ATMA1 β€”
Technology OptiMOS 5 OptiMOS 5 trench
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID, Tc) 95 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max @ VGS=10V 5.2 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V β€”
Total Power Dissipation (Tc) 83 W β€”
Total Power Dissipation (Ta) 2.5 W β€”
Operating Junction Temperature -55C to +150C β€”
Package PG-TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8-6 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) 1 (per JEDEC J-STD-020)
Product Family β€” OptiMOS 5 25V
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) Max β€” 25 V
Continuous Drain Current (ID) at Ta β€” 33 A
Continuous Drain Current (ID) at Tc β€” 100 A
On-Resistance RDS(on) Max at VGS=10V β€” 1.5 mOhm
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 50 W
Pin Count β€” 8
Operating Temperature Range β€” -55C to +150C (junction)
Gate Threshold Voltage VGS(th) Typ β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ β€” [DATA_NEEDED: Qg typical value]

Datasheets & Resources

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