BSC052N08NS5ATMA1 vs BSC015NE2LS5IATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC052N08NS5ATMA1 disebabkan oleh Infineon dan BSC015NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC052N08NS5ATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 trench |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-6 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 5 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at Ta | — | 33 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 1.5 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 50 W |
| Kiraan Pin | — | 8 |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: Qg typical value] |