BSC076N06NS3GATMA1 vs BSC084P03NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC076N06NS3GATMA1 by Infineon and BSC084P03NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC076N06NS3GATMA1 BSC084P03NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 60 V -30 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] 58 nC @ VGS = -10 V
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 69 W
Operating Temperature Range -55C to +150C -55C to +150C
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1 (unlimited)
RoHS Compliance Compliant —
Halogen Free Yes (per Infineon product page) —
Polarity / Channel Type — P-Channel
Continuous Drain Current (Ta) — 14.9 A
Continuous Drain Current (Tc) — 78.6 A
Rds(on) max @ VGS = -10 V — 6.1 mOhm
Rds(on) max @ VGS = -2.5 V — [DATA_NEEDED: Rds(on) at 2.5V]
Gate Threshold Voltage (VGS(th) typ) — -1.7 V
Input Capacitance (Ciss) — 3.19 nF
Output Capacitance (Coss) — 110 pF
Reverse Transfer Capacitance (Crss) — 1.52 nF
Technology Family — OptiMOS P3
RoHS Status — Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote