BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
MPN: BSC084P03NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.65 | $6.50 |
| 100 | $0.49 | $49.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.31 | $310.00 |
| 5,000 | $0.24 | $1,200.00 |
Drop-in alternatives for BSC084P03NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
BSC084P03NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (Ta) | 14.9 A |
| Continuous Drain Current (Tc) | 78.6 A |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | 3.19 nF |
| Output Capacitance (Coss) | 110 pF |
| Reverse Transfer Capacitance (Crss) | 1.52 nF |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 69 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Technology Family | OptiMOS P3 |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited) |
BSC084P03NS3GATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (drive to -10V to fully enhance) |
| Pin 2 | SOURCE — Source connection (electrically tied to pins 3, 4, 5, 6, 7 and the exposed pad) |
| Pin 3 | SOURCE — Source connection |
| Pin 4 | SOURCE — Source connection |
| Pin 5 | SOURCE — Source connection |
| Pin 6 | SOURCE — Source connection |
| Pin 7 | SOURCE — Source connection |
| Pin 8 | DRAIN — Drain connection |
| Pin PAD | EP (Source) — Exposed thermal pad - electrically tied to SOURCE, must be soldered to PCB copper for thermal dissipation |
Safe Operating Area (SOA) - BSC084P03NS3GATMA1
Typical Applications
BSC084P03NS3GATMA1 is suitable for 7 applications: 12 V Load Switch (Notebook/Tablet), Reverse-Polarity Protection (24 V Industrial), Li-ion Battery Pack Protection, Synchronous Rectifier (Buck Converter), Motor Drive H-Bridge (Low Side), Hot-Swap / Inrush Limiting, USB-C VBUS Load Switch.
12 V Load Switch (Notebook/Tablet)
The BSC084P03NS3GATMA1 excels as a high-side load switch on 12 V rails inside notebook and tablet motherboards. Its P-channel polarity eliminates the charge pump typically required for N-channel high-side switches - a 3.3 V GPIO plus a small level shifter directly drives the gate, saving PCB area and cost. At continuous 5-8 A loads, the 6.1 mOhm Rds(on) dissipates only 0.2-0.5 W, well below the 2.5 W Ta rating without external heatsinking. The PG-TDSON-8-5 footprint with exposed pad handles transient inrush during plug-in events while keeping the BOM small.
Recommended
Reverse-Polarity Protection (24 V Industrial)
The BSC084P03NS3GATMA1 is well suited for high-side reverse-polarity protection in 24 V industrial systems. Wired as a P-channel FET in series with the input rail, it blocks fault current within microseconds of a reversed connection, protecting downstream DC-DC converters, motor drivers, and PLC I/O. Its -30 V VDS comfortably handles 24 V nominal plus transient surge headroom, and the 6.1 mOhm Rds(on) keeps voltage drop below 50 mV even at 8 A continuous load. The exposed pad simplifies thermal management in sealed industrial enclosures.
Recommended
Li-ion Battery Pack Protection
In multi-cell Li-ion battery packs the BSC084P03NS3GATMA1 serves as the high-side disconnect MOSFET, providing load-side overcurrent and short-circuit protection. The P-channel configuration simplifies gate drive because the source sits at pack-positive, allowing the battery protection IC to pull the gate to ground for turn-on with a single low-side driver. Its -30 V rating covers one cell stack plus transient margin, and the 78.6 A Tc current rating delivers ample headroom over typical 10-20 A discharge profiles. Pair with a dedicated fuel-gauge and protection IC.
Recommended
Synchronous Rectifier (Buck Converter)
The BSC084P03NS3GATMA1 functions effectively as the low-side synchronous rectifier in buck converters up to 15-20 A, although it is a P-channel device, so the driver topology differs from standard N-channel low-side implementations. Its 58 nC total gate charge and 110 pF Coss minimize switching loss at 500 kHz-1 MHz switching frequencies, helping maintain high efficiency in 5 V to 1 V POL converters feeding processors and ASICs. The exposed thermal pad keeps junction temperature within limits during continuous rectification at full load.
Recommended
Motor Drive H-Bridge (Low Side)
In low-voltage H-bridge motor drives the BSC084P03NS3GATMA1 handles low-side switching for brushed DC motors up to 30 V. Although P-channel devices are unconventional on the low side, the topology allows simplified gate drive without a bootstrap circuit, useful in low-cost fan, pump, and valve drivers. The 6.1 mOhm Rds(on) reduces conduction loss versus the small-signal MOSFETs typically used, improving thermal performance in continuous-duty applications like PC fans and appliance pumps.
Recommended
Hot-Swap / Inrush Limiting
The BSC084P03NS3GATMA1 is a strong choice for hot-swap and inrush-current limiting in 12 V distribution systems such as RAID arrays, telecom cards, and PoE midspan injectors. Used as the high-side P-channel switch with controlled gate ramp-up, it limits the dI/dt when a capacitive load is connected, preventing connector arcing and backplane disturbance. Its 78.6 A Tc rating handles momentary inrush, while the 6.1 mOhm Rds(on) keeps steady-state voltage drop negligible. The exposed thermal pad absorbs short-duration overload events.
Recommended
USB-C VBUS Load Switch
In USB-C Power Delivery designs the BSC084P03NS3GATMA1 acts as the VBUS load switch, providing source-to-sink isolation, current limiting, and fault protection. Its P-channel polarity aligns with VBUS high-side switching without charge-pump complexity, and the 6.1 mOhm Rds(on) minimizes voltage drop at 5 A Type-C current. The PG-TDSON-8-5 footprint fits underneath small Type-C connectors, while the exposed pad dissipates heat during continuous 5 V/3 A delivery.
Recommended
Recommended Products Summary
Engineering reference data for BSC084P03NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC060P03NS3EGATMA1 | BSC076N06NS3GATMA1 | BSC022N04LS6ATMA1 | BSC0902NSIATMA1 | BSP316PH6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8 (SOT-8) - same family footprint |
| Polarity | P-Channel | P-Channel | N-Channel | N-Channel | N-Channel | P-Channel |
| VDS max | -30 V | -30 V | -60 V | -40 V | -30 V | -30 V |
| Rds(on) max @ 10V | 6.1 mOhm | 6.0 mOhm | 7.6 mOhm | 2.2 mOhm | 9.0 mOhm | 45 mOhm |
| Continuous Drain Current (Tc) | 78.6 A | 80 A | 70 A | 100 A | 60 A | 21 A |
| Gate Charge (Qg) | 58 nC | 55 nC | 75 nC | 40 nC | 65 nC | 12 nC |
| Technology Family | OptiMOS P3 | OptiMOS P3 | OptiMOS 3 | OptiMOS 6 | OptiMOS 3 | SIPMOS |
| AEC-Q101 Automotive Qualified | No (Industrial grade) | Yes | Yes | Yes | Yes | No |
Key Differentiators
- P-channel polarity eliminates need for charge pump in high-side switches (vs BSC0902NSIATMA1 (N-channel sibling))
- Lowest Rds(on) in OptiMOS P3 P-channel -30V family (vs BSP316PH6327XTSA1 (older SIPMOS P-channel -30V))
- Higher peak current handling vs general-purpose N-channel cousins (vs BSC076N06NS3GATMA1 (-60V N-channel sibling))
- Surface-mount PG-TDSON-8-5 with exposed thermal pad (vs IRF4905STRLPBF (TO-220AB through-hole))
Design Notes
Estimated: At VGS=-10V with continuous 14.9 A (Ta) and 78.6 A (Tc) operation, the 6.1 mOhm Rds(on) dissipates approximately 1.4 W at 15 A or 37.6 W at 78 A on the die. The PG-TDSON-8-5 package has a typical theta_JC of approximately 1.8 C/W, which keeps the junction below 150 C if the case is held at 80 C or lower. Always solder the exposed thermal pad to a copper pour with multiple thermal vias to inner planes; without this path the part will thermally throttle at much lower currents than the datasheet rating suggests. Verify with a thermal camera in worst-case conditions.
Place a 10 kOhm to 100 kOhm gate-to-source pull-down resistor close to the gate pin (within 5 mm) to prevent unintended turn-on from Miller coupling during drain voltage transitions. Route the gate trace away from the drain node to minimize parasitic dv/dt coupling through Crss (1.52 nF). The source pins and exposed pad should be tied to a single large copper pour that serves as both electrical and thermal conduction; star-ground topology is not required for the source since all source pins are internally bonded.
Common pitfalls: (a) Driving the gate with only -3.3V from a low-voltage GPIO without a level shifter - this leaves the FET in the linear region and may exceed SOA during turn-on. (b) Forgetting the body diode conduction path during dead-time transitions in synchronous rectification, which can cause voltage overshoot on the drain node. (c) Exceeding the -30V VDS rating during hot-plug or load-dump transients - add a TVS diode or Zener clamp if the application sees inductive kickback above 25 V. (d) Using too-small a gate-drive resistor (below 4.7 Ohm) without a series ferrite bead, causing ringing that may exceed VGS max of +/-20V.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial grade - not AEC-Q100/101 qualified; for automotive applications use BSC060P03NS3EGATMA1 (AEC-Q101). Halogen-free per JEDEC JS709. Lead-free reflow profile per J-STD-020.
