BSC0901NSIATMA1 vs IAUZ18N10S5L420ATMA1 Comparison
Detailed side-by-side comparison of BSC0901NSIATMA1 by Infineon and IAUZ18N10S5L420ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0901NSIATMA1
BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
BSC0901NSIATMA1 β ActiveInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveSpecification Comparison
| Parameter | BSC0901NSIATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.48 |
| Technology | OptiMOS 25V N-Channel Power MOSFET | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 30 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical | β |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge nC] | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc | 69 W | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TDSON-8-6 (5x6 mm with exposed pad) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 100V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25Β°C | β | 18 A |
| On-Resistance RDS(on) max at VGS=10V | β | 42 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | β | 8.5 nC |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 qualified |
| Configuration | β | Single with built-in diode |