BSC0901NSIATMA1 vs IAUZ18N10S5L420ATMA1 Perbandingan

Perbandingan bersamaan detil BSC0901NSIATMA1 dari Infineon dan IAUZ18N10S5L420ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC0901NSIATMA1 IAUZ18N10S5L420ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 25V N-Channel Power MOSFET OptiMOS 5 trench
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10V 2.0 mOhm typical —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) 2.2 V max —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge nC] —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 69 W —
Rentang Suhu Kerja -55 C to +150 C —
Paket PG-TDSON-8-6 (5x6 mm with exposed pad) PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Level MSL 1 1
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 100V
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 18 A
On-Resistance RDS(on) max at VGS=10V — 42 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — 1.7 V to 2.7 V
Total Gate Charge (Qg) typ. — 8.5 nC
Power Dissipation (PD) at TC=25°C — 30 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Configuration — Single with built-in diode

Spek dan Sumber

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