BSC0901NSIATMA1 vs IAUZ18N10S5L420ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0901NSIATMA1 sa pamamagitan ng Infineon at IAUZ18N10S5L420ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC0901NSIATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 25V N-Channel Power MOSFET | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 30 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge nC] | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | — |
| Packhaging | PG-TDSON-8-6 (5x6 mm with exposed pad) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Level ng MSL | 1 | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 100V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | — | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Configuration | — | Single with built-in diode |