BSC0911NDATMA1 vs BSC035N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and BSC035N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0911NDATMA1

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 βœ“ Active
Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC0911NDATMA1 BSC035N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V β€”
Configuration Dual N-Channel (2 N-CH) β€”
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (ID) 18 A β€”
Pulsed Drain Current (IDM) 30 A β€”
Power Dissipation (PD) 1 W β€”
Package PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-1 (8-pin, exposed drain pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
Channel Type N-Channel Enhancement Mode β€”
Technology OptiMOS trench MOSFET β€”
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] β€”
Series β€” OptiMOS 3
FET Type β€” N-Channel
Continuous Drain Current (ID) at Tc=25Β°C β€” 100 A
Continuous Drain Current (ID) at Ta=25Β°C β€” 21 A
RDS(on) Max at VGS=10V β€” 3.5 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.7 V (typ)
Power Dissipation (Pd) at Ta=25Β°C β€” 2.5 W
Power Dissipation (Pd) at Tc=25Β°C β€” 69 W
Operating Junction Temperature β€” -55Β°C to +150Β°C
Lead-Free β€” Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote