BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
MPN: BSC035N04LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 5,000 | $0.48 | $2,400.00 |
Drop-in alternatives for BSC035N04LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC059N04LSGATMA1
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View Datasheet →BSC042N04NSG
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BSC035N04LSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | 21 A |
| RDS(on) Max at VGS=10V | 3.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25°C | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | 69 W |
| Operating Junction Temperature | -55°C to +150°C |
| Mounting Type | Surface Mount |
| Package | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSC035N04LSGATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; apply 10 V for full enhancement |
| Pin 2 | Source (S) — Source connection |
| Pin 3 | Source (S) — Source connection |
| Pin 4 | Source (S) — Source connection |
| Pin 5 | Source (S) — Source connection |
| Pin 6 | Source (S) — Source connection |
| Pin 7 | Source (S) — Source connection |
| Pin 8 | Drain (D) — Drain connection; also electrically tied to exposed pad |
| Pin EP | Exposed Pad (Drain) — Drain connection - primary thermal dissipation path, must be soldered to PCB copper |
Safe Operating Area (SOA) - BSC035N04LSGATMA1
Typical Applications
BSC035N04LSGATMA1 is suitable for 6 applications: 12V Synchronous Rectification in DC-DC Buck Converters, 24V Industrial Hot-Swap and OR-ing Controllers, Battery Protection in Multi-Cell Lithium Packs (4S-8S), BLDC Motor Drive Low-Side Switch, USB Power Delivery (PD) Load Switch, eFuse and Solid-State Circuit Breaker.
12V Synchronous Rectification in DC-DC Buck Converters
The BSC035N04LSGATMA1 excels as the low-side synchronous rectifier in 12 V buck converters powering servers, GPUs, and telecom bricks. Its 3.5 mΩ RDS(on) at VGS=10 V keeps conduction loss under 1% at 25 A output, while the OptiMOS 3 gate-charge profile allows 500 kHz switching with acceptable crossover loss. Placed on the ground-referenced low-side with 10 V gate drive from a bootstrap or dedicated charge pump, it outperforms older 5 mΩ parts by 1-2 percentage points in efficiency. Unlike a Schottky diode, the synchronous MOSFET eliminates reverse-recovery loss but requires careful dead-time control to avoid shoot-through at the switching node.
Recommended
24V Industrial Hot-Swap and OR-ing Controllers
In 24 V industrial backplanes, the BSC035N04LSGATMA1 serves as the main pass MOSFET in hot-swap and OR-ing circuits where inrush current and back-feed prevention are critical. Its 40 V VDS rating provides 16 V of margin above a 24 V nominal rail, comfortably handling transients and load-dump events. The 100 A continuous rating supports high-power compute and storage shelves, while 3.5 mΩ RDS(on) keeps voltage drop under 70 mV at 20 A. A dedicated hot-swap controller monitors VDS for current-limit foldback, and the PG-TDSON-8-1 exposed pad dissipates fault-mode heat directly into the chassis copper.
Recommended
Battery Protection in Multi-Cell Lithium Packs (4S-8S)
For 4S to 8S lithium battery packs (14.4 V to 33.6 V nominal), the BSC035N04LSGATMA1 sits within the safe operating area as the charge/discharge MOSFET or secondary protection switch. Its 40 V VDS handles a fully charged 8S pack plus transient overshoot, and the 100 A continuous rating supports high-discharge e-mobility and power-tool packs. The 3.5 mΩ RDS(on) reduces heat generation during 30 A continuous discharge, allowing compact PCB layouts without bulky heatsinks. Compared to dual-MOSFET back-to-back configurations, single MOSFETs with a battery monitor IC simplify the BOM and reduce conduction path resistance by 50%.
Recommended
BLDC Motor Drive Low-Side Switch
In 12 V to 24 V BLDC motor drives for e-bikes, drones, and power tools, the BSC035N04LSGATMA1 functions as the low-side switch in a three-phase inverter leg. At 3.5 mΩ RDS(on) and 100 A continuous, it handles peak motor currents of 60-80 A without thermal runaway. The OptiMOS 3 process provides a robust body diode with acceptable reverse-recovery for trapezoidal commutation, though for sinusoidal FOC drives below 20 kHz, an external Schottky anti-parallel diode is recommended. The PG-TDSON-8-1 footprint is compatible with most gate-driver reference designs.
Recommended
USB Power Delivery (PD) Load Switch
The BSC035N04LSGATMA1 works as the high-current load switch in 100 W USB PD 3.1 EPR sinks and sources, where 28 V/36 V/40 V negotiation profiles are supported. Its 40 V VDS rating covers the 28 V PD profile plus margin, while 3.5 mΩ RDS(on) at 5 A keeps voltage drop below 18 mV - critical for tight PD voltage tolerance. The PG-TDSON-8-1 footprint allows PCB placement directly behind the USB-C connector for shortest current loop. Pairing with a dedicated USB PD controller enables programmable current limit and OVP/UVP protection.
Recommended
eFuse and Solid-State Circuit Breaker
The BSC035N04LSGATMA1 acts as the main pass element in solid-state circuit breakers and eFuse modules for 12 V and 24 V distribution in automotive and industrial systems. Its 100 A continuous rating supports high-current distribution, while 3.5 mΩ RDS(on) maintains efficiency during normal operation. Under fault conditions, the controller detects an overcurrent event and turns off the gate within microseconds - far faster than mechanical breakers. The 40 V VDS handles inductive kickback from motors and solenoids. AEC-Q100 grade variants are available from Infineon for automotive-grade designs.
Recommended
Recommended Products Summary
Engineering reference data for BSC035N04LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC059N04LSGATMA1 | BSC042N04NSG | BSC038N04NSG | NTMFS4841N | SiRA52DP |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | SO-8FL - same footprint family | PowerPAK SO-8 - same footprint family |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID at Tc=25°C) | 100 A | 85 A | 100 A | 100 A | 89 A | 60 A |
| RDS(on) Max at VGS=10V | 3.5 mΩ | 5.9 mΩ (+69%) | 4.2 mΩ (+20%) | 3.8 mΩ (+9%) | 4.5 mΩ (+29%) | 5.0 mΩ (+43%) |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | onsemi Trench | Vishay TrenchFET Gen IV |
| Power Dissipation at Tc=25°C | 69 W | 63 W | 69 W | 69 W | 53 W | 50 W |
| Approx. Unit Price (qty 1000, USD) | $0.61 | $0.55 | $0.68 | $0.72 | $0.58 | $0.65 |
Key Differentiators
- Lowest RDS(on) in its OptiMOS 3 40 V class (vs BSC059N04LSGATMA1)
- Mature, widely-stocked OptiMOS 3 process (vs BSC042N04NSG (OptiMOS 5))
- Higher continuous current rating than cross-brand alternatives (vs NTMFS4841N (onsemi))
Design Notes
Estimated thermal analysis: at 30 A continuous drain current with 3.5 mΩ RDS(on), the BSC035N04LSGATMA1 dissipates about 3.15 W. Using a 1 square inch 2 oz copper pour on the drain pad, theta_JA is approximately 50 C/W, giving a junction temperature rise of 158°C above ambient - exceeding the 150°C maximum. Therefore, at currents above 25 A, use a 4+ square inch copper pour, a dedicated thermal via array, or attach a small heatsink to keep Tj under 125°C. Always verify with the datasheet's thermal impedance curves for your specific PCB layout.
Place the gate resistor (typically 10-47 Ω) within 5 mm of the gate pin to dampen parasitic oscillation caused by the gate-source capacitance and source-lead inductance. Keep the high-current drain loop area minimal by routing drain and source planes on adjacent layers. The PG-TDSON-8-1 exposed pad must be soldered to a copper pour with at least 4 thermal vias (0.3 mm diameter) connecting to inner plane layers for effective heat extraction.
Do not exceed VGS of ±20 V absolute maximum, even briefly during gate-driver transients - the thin gate oxide can be permanently damaged. Ensure the gate drive voltage reaches at least 10 V for full enhancement; driving at 5 V (logic level) dramatically increases RDS(on) and conduction loss. For switching applications above 100 kHz, add a small external Schottky anti-parallel diode to prevent body-diode reverse-recovery losses from degrading efficiency.
Compliance Information
RoHS compliant per Infineon product page; lead-free finish indicated by ATMA1 suffix; standard industrial grade (not AEC-Q100 qualified - Infineon offers separate automotive-grade variants for that purpose).
