BSC0911NDATMA1 vs IAUC60N06S5L073ATMA1 Comparison

Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0911NDATMA1 BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 βœ“ Active
Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 βœ“ Active

Specification Comparison

Parameter BSC0911NDATMA1 IAUC60N06S5L073ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V β€”
Configuration Dual N-Channel (2 N-CH) Single N-Channel
Drain-Source Voltage (VDS) 25 V β€”
Continuous Drain Current (ID) 18 A β€”
Pulsed Drain Current (IDM) 30 A β€”
Power Dissipation (PD) 1 W β€”
Package PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-33 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
Channel Type N-Channel Enhancement Mode β€”
Technology OptiMOS trench MOSFET Trench (OptiMOS 5)
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tj β€” 60 A
On-Resistance RDS(on) max β€” 7.3 mΞ©
Total Gate Charge (QG) β€” 17.4 nC
Power Dissipation (PD) at Tc β€” 52 W
Operating Temperature Range β€” -55C to +175C
Number of Pins β€” 8
Qualification β€” AEC-Q101 automotive grade
Gate Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical]
Thermal Resistance RΞΈJA β€” [DATA_NEEDED: thermal resistance junction-to-ambient]

Datasheets & Resources

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