BSC0911NDATMA1 vs IAUC60N06S5L073ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0911NDATMA1 disebabkan oleh Infineon dan IAUC60N06S5L073ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC0911NDATMA1 IAUC60N06S5L073ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V —
Configuration Dual N-Channel (2 N-CH) Single N-Channel
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) 18 A —
Pulsed Drain Current (IDM) 30 A —
Power Dissipation (PD) 1 W —
Kemasan PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-33 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Channel Type N-Channel Enhancement Mode —
Technology OptiMOS trench MOSFET Trench (OptiMOS 5)
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Series — OptiMOS 5
Jenis Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tj — 60 A
On-Resistance RDS(on) max — 7.3 mΩ
Total Gate Charge (QG) — 17.4 nC
Power Dissipation (PD) at Tc — 52 W
Gambaran Suhu Operasi — -55C to +175C
Bilangan Pin — 8
Qualification — AEC-Q101 automotive grade
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Thermal Resistance RθJA — [DATA_NEEDED: thermal resistance junction-to-ambient]

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