BSC0911NDATMA1 vs IAUC60N06S5L073ATMA1 Perbandingan
Perbandingan bersamaan detil BSC0911NDATMA1 dari Infineon dan IAUC60N06S5L073ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC0911NDATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Configuration | Dual N-Channel (2 N-CH) | Single N-Channel |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) | 18 A | — |
| Pulsed Drain Current (IDM) | 30 A | — |
| Power Dissipation (PD) | 1 W | — |
| Paket | PG-TISON-8 (8-PowerTDFN) | PG-TDSON-8-33 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C (junction) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | OptiMOS trench MOSFET | Trench (OptiMOS 5) |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Jumlah Pin | — | 8 |
| Qualification | — | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |