BSC0921NDIATMA1 vs BSC097N06NSATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma BSC0921NDIATMA1 tarafından Infineon ve BSC097N06NSATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre BSC0921NDIATMA1 BSC097N06NSATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 25V (N-channel) OptiMOS 5 (Trench)
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) [DATA_NEEDED: IDM peak value]
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
Paket PG-TISON-8 (8-pin, exposed pad) —
Montaj Türü Surface Mount Surface Mount
İşletim Sıcaklığı -55C to +150C (junction) —
RoHS Durumu Compliant Compliant
MSL Seviyesi 1 (per Infineon OptiMOS family) 1 (Unlimited)
Primary Application Synchronous buck converters, VRMs, POL regulators —
Series — OptiMOS 5
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
İşletim Jant Sıcaklığı — -55C to +150C
Paket / Kas — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (EAS per datasheet)

Dökümanlar & Kaynaklar

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