BSC093N15NS5ATMA1 vs BSC040N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC040N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC093N15NS5ATMA1 BSC040N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V OptiMOS 5 (N-channel trench MOSFET)
FET Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at TC 87 A —
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ —
Power Dissipation (PD) at TC 139 W —
Package SuperSO8 5x6 (PG-TDSON-8-7) PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V —
Operating Temperature Range [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg typical]
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1
Halogen Free [DATA_NEEDED: halogen free status] —
Part Number — BSC040N08NS5ATMA1
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Maximum Drain Current (ID, Tc=25C, package-limited) — 121 A
On-Resistance (RDS(on) max, VGS=10V) — 4 mOhm
Power Dissipation (Ta=25C, 1in² PCB) — 2.5 W
Power Dissipation (Tc=25C) — 104 W
Operating Junction Temperature — -55 C to +175 C
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Primary Application — Synchronous rectification in telecom and server power supplies

Datasheets & Resources

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