BSC093N15NS5ATMA1 vs BSC040N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC040N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΞ© 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 β ActiveInfineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC093N15NS5ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.83 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | OptiMOS 5 (N-channel trench MOSFET) |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at TC | 87 A | β |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΞ© | β |
| Power Dissipation (PD) at TC | 139 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg typical] |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Halogen Free | [DATA_NEEDED: halogen free status] | β |
| Part Number | β | BSC040N08NS5ATMA1 |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | β | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | β | 4 mOhm |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | β | 2.5 W |
| Power Dissipation (Tc=25C) | β | 104 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Primary Application | β | Synchronous rectification in telecom and server power supplies |