BSC093N15NS5ATMA1 vs BSC040N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC093N15NS5ATMA1 dari Infineon dan BSC040N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC093N15NS5ATMA1 BSC040N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V OptiMOS 5 (N-channel trench MOSFET)
FET Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at TC 87 A —
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ —
Power Dissipation (PD) at TC 139 W —
Paket SuperSO8 5x6 (PG-TDSON-8-7) PG-TDSON-8-7 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg typical]
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] 1
Bebas Halogen [DATA_NEEDED: halogen free status] —
Part Number — BSC040N08NS5ATMA1
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Maximum Drain Current (ID, Tc=25C, package-limited) — 121 A
On-Resistance (RDS(on) max, VGS=10V) — 4 mOhm
Power Dissipation (Ta=25C, 1in² PCB) — 2.5 W
Power Dissipation (Tc=25C) — 104 W
Suhu Hubung Kerja — -55 C to +175 C
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Primary Application — Synchronous rectification in telecom and server power supplies

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