BSC094N06LS5ATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC094N06LS5ATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC094N06LS5ATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC094N06LS5ATMA1 BSC052N08NS5ATMA1
Technology OptiMOS™ 5 (logic-level) OptiMOS 5
FET Type N-Channel
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) at TC=25°C 47 A
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10 V 9.4 mΩ
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C 36 W
Operating Junction Temperature -55 °C to +150 °C -55C to +150C
Package PG-TDSON-8-6 (SuperSO8 5x6) PG-TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1 (unlimited)
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V
Continuous Drain Current (ID, Tc) 95 A
On-Resistance RDS(on) max @ VGS=10V 5.2 mΩ
Gate-Source Voltage (VGS) ±20 V
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V
Total Power Dissipation (Tc) 83 W
Total Power Dissipation (Ta) 2.5 W

Datasheets & Resources

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