IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon
MPN: IPD034N06N3GATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.98 | $9.80 |
| 100 | $0.78 | $78.00 |
| 500 | $0.66 | $330.00 |
| 1,000 | $0.58 | $580.00 |
| 2,500 | $0.51 | $1,275.00 |
Drop-in alternatives for IPD034N06N3GATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD031N06L3GATMA1
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View Datasheet βIPB034N06L3G
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IPD034N06N3G
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NTD4906N
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SUD50N06-25L
β Drop-Inπ Reference alternative (not in catalog)
BSC094N06LS5ATMA1
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View Datasheet βIPD034N06N3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Maximum Power Dissipation (Ptot) | 167 W |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) |
| RoHS Status | Compliant (Pb-free green finish) |
| Automotive Qualified | Yes (per Infineon product page) |
IPD034N06N3GATMA1 Pin Configuration
| Pin 1 | Gate β Gate control input (drive 10V for full enhancement) |
| Pin 2 | Drain β Drain connection (also tied to metal tab) |
| Pin 3 | Source β Source connection |
| Pin Tab | Drain (Tab) β Metal mounting tab, internally connected to Drain pin 2; serves as thermal pad and primary drain current path |
Safe Operating Area (SOA)
Typical Applications
IPD034N06N3GATMA1 is suitable for 6 applications: 12V/24V Synchronous Rectification in DC-DC Converters, Low-Side Switch in Brushed DC Motor Drive (H-Bridge), Battery Protection / OR-ing FET in Telecom DC Plants, Automotive ECU Load Switching (AEC-Q Qualified), Hot-Swap / Inrush Current Limiter in 24V Industrial Systems, Power Tool / E-Bike Battery Pack Output Stage.
12V/24V Synchronous Rectification in DC-DC Converters
The IPD034N06N3GATMA1's 3.4 mOhm RDS(on) at VGS=10V and 60V VDS rating make it an ideal synchronous rectifier FET in 12V and 24V buck/forward converters. It replaces Schottky diodes in the low-side position, cutting rectification losses by 60-70% at 20A load and pushing peak efficiency above 95% in well-optimized designs. The 100A pulsed current rating provides ample margin for transient inrush during startup. Compared to a 60V Schottky diode with 0.5V VF, this MOSFET drops only I x RDS(on) (e.g. 68mV at 20A), translating into 6-8W of saved loss per FET at full load.
Recommended
Low-Side Switch in Brushed DC Motor Drive (H-Bridge)
Used as a low-side switch in a 12V/24V brushed DC motor H-bridge, the IPD034N06N3GATMA1 handles continuous motor currents up to 30A and stall inrush up to 100A pulsed. The 3.4 mOhm RDS(on) keeps conduction loss to about 3W at 30A, while the DPAK tab mounts to a copper pour for heatsinking. For bidirectional motor control, two N-FETs on the low side paired with two P-FETs on the high side form a classic H-bridge. The OptiMOS 3 body diode also supports hard commutation during PWM switching without reverse-recovery issues common to planar MOSFETs.
Recommended
Battery Protection / OR-ing FET in Telecom DC Plants
In -48V telecom DC plant OR-ing and lithium battery protection modules, the IPD034N06N3GATMA1's 60V VDS provides sufficient margin for 24V/48V bus operation while its 3.4 mOhm RDS(on) minimizes voltage drop in the power path. As an OR-ing FET, it prevents back-feeding between redundant -48V rectifiers; as a battery disconnect FET, it isolates the pack during fault conditions. The automotive-grade qualification also makes it acceptable for e-mobility battery management systems. Multiple parallel devices can scale current handling into the 200A+ range for high-power battery packs.
Recommended
Automotive ECU Load Switching (AEC-Q Qualified)
The IPD034N06N3GATMA1's automotive qualification makes it suitable for ECU load switching in 12V automotive electrical systems, where it can drive solenoids, lamps, and motor loads up to 30A continuous. Its 60V VDS rating tolerates load-dump transients up to 35V typical on 12V buses. Used as a high-side or low-side switch with proper gate driving, it replaces mechanical relays with a solid-state solution offering 10x faster switching, no contact bounce, and longer operational life. AEC-Q100 grade parts are commonly sourced from this Infineon part family for body-electronics modules.
Recommended
Hot-Swap / Inrush Current Limiter in 24V Industrial Systems
Hot-swap controllers paired with the IPD034N06N3GATMA1 enable safe board insertion into live 24V backplanes in industrial automation and telecommunications equipment. The MOSFET acts as the series pass element, controlled by a hot-swap IC that ramps gate voltage to limit inrush current to safe levels (typically 1-3A/C). At 3.4 mOhm RDS(on), steady-state voltage drop is only 34mV at 10A load, well within ATCA/AdvancedTCA budget. The 100A pulsed rating handles momentary fault currents while downstream protection triggers.
Recommended
Power Tool / E-Bike Battery Pack Output Stage
In 18V/36V cordless power tool and e-bike battery packs, the IPD034N06N3GATMA1 serves as the main discharge FET between the Li-ion stack and the motor inverter. Its 3.4 mOhm RDS(on) minimizes voltage sag during high-current discharge (e.g. 30A peak in a 36V e-bike), preserving usable pack capacity. The automotive-grade reliability and 60V VDS rating tolerate the inductive kick from BLDC motor windings. Multiple FETs in parallel scale to 60-100A continuous for high-performance e-bike and power-tool applications.
Recommended
Recommended Products Summary
Engineering reference data for IPD034N06N3GATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD031N06L3GATMA1 | IPB034N06L3G | IPD034N06N3G | NTD4906N | SUD50N06-25L | BSC094N06LS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) tab variant - same | PG-TO252-3 (DPAK) - same | DPAK (TO-252) - same | DPAK (TO-252) - same | PG-TDSON-8 (DPAK footprint compatible) |
| VDS max | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (Tc) | 100 A | 100 A | 120 A | 100 A | 74 A | 50 A | 100 A (SuperSO8) |
| RDS(on) max @ VGS=10V | 3.4 mOhm | 3.1 mOhm | 3.4 mOhm | 3.4 mOhm | 6 mOhm | 25 mOhm | 0.94 mOhm |
| Technology | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | Trench N-FET | Trench N-FET | OptiMOS 5 trench |
| Power Dissipation (Tc) | 167 W | 167 W | 300 W (D2PAK) | 167 W | 125 W | 100 W | 139 W (SuperSO8) |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes | No | Yes |
| Approx. 1000-pc Price (USD) | 0.58 | 0.72 | 1.10 | 0.58 | 0.45 | 0.38 | 0.95 |
Key Differentiators
- Industry-leading RDS(on) for OptiMOS 3 generation (vs NTD4906N)
- Higher continuous drain current rating (vs SUD50N06-25L)
- OptiMOS 3 platform with proven automotive reliability (vs BSC094N06LS5ATMA1 (OptiMOS 5))
- Lower RDS(on) alternative exists within same Infineon family (vs IPD031N06L3GATMA1)
Design Notes
Estimated: at VIN=24V, VDS=12V (during switching transient or saturated operation), and continuous ID=20A, power dissipation is approximately 20V x 20A = 400W peak or 20A^2 x 3.4mOhm = 1.36W steady-state. With DPAK RthJA ~50 C/W on 1 oz copper FR-4 PCB, steady-state junction temperature rise is 1.36 x 50 = 68C above ambient - manageable without a heatsink. For continuous currents above 30A, attach an external heatsink or use multi-layer PCBs with 2+ oz copper and thermal vias under the DPAK tab to keep Tj below 125C.
Place the DPAK tab on a copper pour with at least 1 square inch of 2 oz copper to minimize thermal resistance. Add an array of thermal vias (12-16 vias, 0.3mm drill, 1mm pitch) under the tab to conduct heat to inner PCB copper layers. Source traces should also use wide, short copper pours to minimize parasitic inductance that can cause VDS overshoot during turn-off. Gate drive traces must be kept short (under 20mm) and routed away from drain-node switching transients.
Do not exceed VGS ratings: the IPD034N06N3GATMA1 has +/-20V absolute maximum VGS rating, but operation above +/-12V is not recommended. Ensure VDS stays below 60V during all operating conditions including load-dump transients on 12V automotive buses (which can reach 35V+). For synchronous-rectifier topologies, add a gate-source resistor of 10 kohm in parallel to keep the gate below Vth during supply transients and prevent parasitic turn-on from Miller current coupling.
In half-bridge and synchronous-rectifier layouts, keep the high-side and low-side FET source connections tight to minimize switching loop inductance. Excessive loop inductance causes VDS overshoot, ringing, and potential avalanche damage. Use a gate-drive resistor of 10-100 ohm (typically 22-47 ohm) to control switching speed and damp ringing. For high-current (>30A) applications, consider using multiple DPAK FETs in parallel rather than a single larger device - paralleling distributes thermal load and reduces conduction loss through redundancy.
Compliance Information
RoHS compliance verified by "G" (green) suffix in orderable part number per Infineon product page. Automotive qualification per Infineon OptiMOS 3 family datasheet. Halogen-free status not explicitly stated in web data - left as unknown.
