BSC097N06NSATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC097N06NSATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC097N06NSATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.65 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 46 A | β |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | 9.7 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation at Ta=25C | 2.5 W | 2.5 W |
| Power Dissipation at Tc=25C | 36 W | 74 W |
| Operating Junction Temperature | -55C to +150C | β |
| Package / Case | PG-TDSON-8-6 (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | [DATA_NEEDED: MSL level] |
| Avalanche Rated | Yes (EAS per datasheet) | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Operating Temperature Range | β | -55C to +150C |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6 mm) |