BSC098N10NS5ATMA1 vs BSC027N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC098N10NS5ATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveInfineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndSpecification Comparison
| Parameter | BSC098N10NS5ATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $1.10 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (100V) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 60 A | β |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 194 A |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc=25C) | 69 W | β |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | β |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | β |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | β |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | [DATA_NEEDED: Tj min/max] |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Shipping Packaging | Tape & Reel (T/R) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC027N10NS5ATMA1 |
| Channel Type | β | N-Channel |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | β | 23 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 2.7 mOhm |
| Power Dissipation (Tc) | β | 214 W |
| Qualification | β | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |