BSC117N08NS5ATMA1 vs BSC094N06LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC117N08NS5ATMA1 by Infineon and BSC094N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveInfineon
BSC094N06LS5ATMA1
BSC094N06LS5ATMA1 - 60V 9.4mΞ© 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC117N08NS5ATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | BSC094N06LS5ATMA1 |
| Technology | OptiMOS 5 | OptiMOSβ’ 5 (logic-level) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) max | 49 A (Tc) | β |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 50 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg typ] |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET junction) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 47 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 9.4 mΞ© |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation (PD) at TC=25Β°C | β | 36 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |