BSC155N06NDATMA1 vs BSC0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC155N06NDATMA1 dari Infineon dan BSC0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC155N06NDATMA1 BSC0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC155N06NDATMA1 —
Technology OptiMOS 3 (N-channel trench) OptiMOS 25V N-Channel Power MOSFET
Configuration Dual N-channel MOSFET array —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) max at VGS=10V 15.5 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Rentang Suhu Kerja -55 C to +175 C -55 C to +150 C
Paket PG-TDSON-8-4 (SuperSO8 5x6 mm) PG-TDSON-8-6 (5x6 mm with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Power Dissipation (Tc=25C) 50 W —
Level MSL 1 1
Status RoHS Compliant (Pb-free plating) Compliant
Lead-Free Plating Yes —
Shoot-Through Immunity Qgd/Qgs < 0.8 —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc — 100 A
On-State Resistance (RDS(on)) at VGS=10V — 2.0 mOhm typical
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — 2.2 V max
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge nC]
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc — 69 W
Jumlah Pin — 8
Bebas Halogen — Yes

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