BSC155N06NDATMA1 vs BSC0901NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC155N06NDATMA1 sa pamamagitan ng Infineon at BSC0901NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC155N06NDATMA1 BSC155N06NDATMA1 - Dual 60V 20A OptiMOS N-MOSFET | Infineon

BSC155N06NDATMA1 - Dual 60V 20A OptiMOS N-MOSFET | Infineon

BSC155N06NDATMA1 ✓ Nakahanda
Infineon
BSC0901NSIATMA1 BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon

BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon

BSC0901NSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC155N06NDATMA1 BSC0901NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number BSC155N06NDATMA1 —
Technology OptiMOS 3 (N-channel trench) OptiMOS 25V N-Channel Power MOSFET
Configuration Dual N-channel MOSFET array —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) max at VGS=10V 15.5 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Hanay ng Temperature na Operasyon -55 C to +175 C -55 C to +150 C
Packhaging PG-TDSON-8-4 (SuperSO8 5x6 mm) PG-TDSON-8-6 (5x6 mm with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Power Dissipation (Tc=25C) 50 W —
Level ng MSL 1 1
Tindminan RoHS Compliant (Pb-free plating) Compliant
Lead-Free Plating Yes —
Shoot-Through Immunity Qgd/Qgs < 0.8 —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc — 100 A
On-State Resistance (RDS(on)) at VGS=10V — 2.0 mOhm typical
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — 2.2 V max
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge nC]
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc — 69 W
Bilang ng Pin — 8
Wala sa Halogen — Yes

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