BSC265N10LSFGATMA1 vs BSC146N10LS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC265N10LSFGATMA1 disebabkan oleh Infineon dan BSC146N10LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC265N10LSFGATMA1 BSC146N10LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) 6.5 A —
Power Dissipation (PD, Tc) 78 W —
Technology OptiMOS 2 (TrenchFET) OptiMOS 5 (logic-level)
Kemasan PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] Logic-level (typ. ~1.7 V)
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55 C to +150 C (TJ max)
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes —
Series OptiMOS 2 —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at Tc=25 C — 44 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 14.6 mOhm
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Avalanche Energy (EAS) — [DATA_NEEDED: EAS]

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