BSD214SNH6327XTSA1 vs BSP316PH6327XTSA1 Comparison

Detailed side-by-side comparison of BSD214SNH6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 ✓ Active

Specification Comparison

Parameter BSD214SNH6327XTSA1 BSP316PH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS SIPMOS (P-channel MOSFET)
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Package SOT-363 (PG-SOT363-PO), 6-pin PG-SOT223-4 (TO-261-4)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C (junction)
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS Status Compliant Compliant
MSL Level 1 1
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Number of Pins — 3 + thermal tab
Channel Mode — Enhancement
Packaging — Tape & Reel (H6327 suffix)

Datasheets & Resources

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