BSD214SNH6327XTSA1 vs BSP316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSD214SNH6327XTSA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSD214SNH6327XTSA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS SIPMOS (P-channel MOSFET)
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Paket SOT-363 (PG-SOT363-PO), 6-pin PG-SOT223-4 (TO-261-4)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55 C to +150 C (junction)
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Level MSL 1 1
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Jumlah Pin — 3 + thermal tab
Channel Mode — Enhancement
Packaging — Tape & Reel (H6327 suffix)

Spek dan Sumber

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