BSD214SNH6327XTSA1 vs BSP316PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD214SNH6327XTSA1 disebabkan oleh Infineon dan BSP316PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD214SNH6327XTSA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS SIPMOS (P-channel MOSFET)
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Kemasan SOT-363 (PG-SOT363-PO), 6-pin PG-SOT223-4 (TO-261-4)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +150 C (junction)
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Aras MSL 1 1
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Bilangan Pin — 3 + thermal tab
Channel Mode — Enhancement
Packaging — Tape & Reel (H6327 suffix)

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