BSF134N10NJ3GXUMA1 vs BSC0921NDIATMA1 Comparison
Detailed side-by-side comparison of BSF134N10NJ3GXUMA1 by Infineon and BSC0921NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 β ActiveInfineon
BSC0921NDIATMA1
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
BSC0921NDIATMA1 β ActiveSpecification Comparison
| Parameter | BSF134N10NJ3GXUMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 9 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.2 W | β |
| Power Dissipation (PD) at TC=25Β°C | 43 W | β |
| Package | MG-WDSON-2 (CanPAK M) | PG-TISON-8 (8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | Dual N-Channel MOSFET Array |
| Terminal Position | Bottom | β |
| Terminal Finish | Silver Nickel | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per Infineon OptiMOS family) |
| Technology | Trench-gate OptiMOS planar | OptiMOS 25V (N-channel) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | Ultra-low (OptiMOS 25V family characteristic) |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | β |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | β |
| Continuous Drain Current (ID) | β | 17 A (per channel) |
| Pulsed Drain Current (IDM) | β | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | β | 1 W |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Output Charge (Qoss) | β | Ultra-low (OptiMOS 25V family characteristic) |
| Operating Temperature | β | -55C to +150C (junction) |
| Primary Application | β | Synchronous buck converters, VRMs, POL regulators |