BSF134N10NJ3GXUMA1 vs BSC0921NDIATMA1 对比
详细并排对比 BSF134N10NJ3GXUMA1 出自 Infineon 和 BSC0921NDIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSF134N10NJ3GXUMA1 | BSC0921NDIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| 封装 | MG-WDSON-2 (CanPAK M) | PG-TISON-8 (8-pin, exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | Dual N-Channel MOSFET Array |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| 工作温度范围 | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per Infineon OptiMOS family) |
| Technology | Trench-gate OptiMOS planar | OptiMOS 25V (N-channel) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | Ultra-low (OptiMOS 25V family characteristic) |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Pulsed Drain Current (IDM) | — | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| 工作温度 | — | -55C to +150C (junction) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |