BSF134N10NJ3GXUMA1 vs BSC0921NDIATMA1 비교
다음의 상세 나란히 비교: BSF134N10NJ3GXUMA1 제조: Infineon 및 BSC0921NDIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSF134N10NJ3GXUMA1 | BSC0921NDIATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.78 | $0.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| 패키지 | MG-WDSON-2 (CanPAK M) | PG-TISON-8 (8-pin, exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | Dual N-Channel MOSFET Array |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| 동작 온도 범위 | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 (per Infineon OptiMOS family) |
| Technology | Trench-gate OptiMOS planar | OptiMOS 25V (N-channel) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | Ultra-low (OptiMOS 25V family characteristic) |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Pulsed Drain Current (IDM) | — | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| 동작 온도 | — | -55C to +150C (junction) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |