BSF134N10NJ3GXUMA1 vs BSC0921NDIATMA1 Comparação
Comparação detalhada lado a lado de BSF134N10NJ3GXUMA1 por Infineon e BSC0921NDIATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSF134N10NJ3GXUMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,78 | $0,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| Encapsulamento | MG-WDSON-2 (CanPAK M) | PG-TISON-8 (8-pin, exposed pad) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | Dual N-Channel MOSFET Array |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| Faixa de temperatura de operação | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 (per Infineon OptiMOS family) |
| Technology | Trench-gate OptiMOS planar | OptiMOS 25V (N-channel) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | Ultra-low (OptiMOS 25V family characteristic) |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Pulsed Drain Current (IDM) | — | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Temperatura de operação | — | -55C to +150C (junction) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |