BSG0813NDIATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSG0813NDIATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSG0813NDIATMA1
BSG0813NDIATMA1 - 25V 19A/33A OptiMOS 5 Power Block | Infineon
BSG0813NDIATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSG0813NDIATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 Power Block | β |
| FET Type | N-Channel MOSFET Array (half-bridge / synchronous buck) | N-Channel |
| Configuration | High-side + Low-side, integrated | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Low-Side Continuous Drain Current (ID) | 19 A | β |
| High-Side Continuous Drain Current (ID) | 33 A | β |
| Power Dissipation (PD) | 2.5 W | β |
| Package | PG-TISON-8 (5.0 x 6.0 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| RDS(on) - Low-Side | [DATA_NEEDED: RDS(on) low-side @ VGS] | β |
| RDS(on) - High-Side | [DATA_NEEDED: RDS(on) high-side @ VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Technology Generation | OptiMOS 5 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Topology | Synchronous buck half-bridge | β |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Technology | β | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |