BSG0813NDIATMA1 vs BSC050N04LSGATMA1 비교

다음의 상세 나란히 비교: BSG0813NDIATMA1 제조: Infineon 및 BSC050N04LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ 활성

사양 비교

파라미터 BSG0813NDIATMA1 BSC050N04LSGATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.05 $0.41
Manufacturer Infineon Technologies —
Series OptiMOS 5 Power Block —
FET Type N-Channel MOSFET Array (half-bridge / synchronous buck) N-Channel
Configuration High-side + Low-side, integrated —
Drain-Source Voltage (VDS) 25 V —
Low-Side Continuous Drain Current (ID) 19 A —
High-Side Continuous Drain Current (ID) 33 A —
Power Dissipation (PD) 2.5 W —
패키지 PG-TISON-8 (5.0 x 6.0 mm) PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: operating temperature range] -55C to +150C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th) typ/min/max]
RDS(on) - Low-Side [DATA_NEEDED: RDS(on) low-side @ VGS] —
RDS(on) - High-Side [DATA_NEEDED: RDS(on) high-side @ VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Technology Generation OptiMOS 5 —
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per JEDEC J-STD-020) 1
토폴로지 Synchronous buck half-bridge —
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Technology — OptiMOS 3 (trench MOSFET)
Avalanche Energy Rated — Yes (single-pulse avalanche)

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