BSG0813NDIATMA1 vs BSC050N04LSGATMA1 Comparaison
Comparaison détaillée côte à côte de BSG0813NDIATMA1 par Infineon et BSC050N04LSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSG0813NDIATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,05 | $0,41 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 Power Block | — |
| FET Type | N-Channel MOSFET Array (half-bridge / synchronous buck) | N-Channel |
| Configuration | High-side + Low-side, integrated | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Low-Side Continuous Drain Current (ID) | 19 A | — |
| High-Side Continuous Drain Current (ID) | 33 A | — |
| Power Dissipation (PD) | 2.5 W | — |
| Boîtier | PG-TISON-8 (5.0 x 6.0 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| RDS(on) - Low-Side | [DATA_NEEDED: RDS(on) low-side @ VGS] | — |
| RDS(on) - High-Side | [DATA_NEEDED: RDS(on) high-side @ VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Technology Generation | OptiMOS 5 | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 |
| Topologie | Synchronous buck half-bridge | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Technology | — | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |