BSL308PEH6327XTSA1 vs BSL308CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSL308PEH6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 βœ“ Active
Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSL308PEH6327XTSA1 BSL308CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.21 $0.21
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS β€”
FET Type 2x P-Channel (Dual) β€”
Drain-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) -2 A (Ta) β€”
Power Dissipation (PD) 500 mW (Ta) β€”
Package PG-TSOP6-6 (TSOT-23-6) PG-TSOP6-6 (TSOP-6, 6 pins)
Configuration Dual, common source Complementary dual MOSFET (1 N-channel + 1 P-channel)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +150 C (TJ) β€”
Automotive Qualification AEC-Q101 β€”
Number of Pins 6 β€”
Channel Mode Enhancement β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] β€”
RoHS Status Compliant Compliant
Product Family β€” OptiMOSβ„’ low-voltage power MOSFETs
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current - N-channel (ID, N-ch) β€” 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) β€” 2 A
Total Power Dissipation (Ptot) β€” 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) β€” [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) β€” [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) β€” 5 nC @ 10 V
Input Capacitance (Ciss) β€” 18 pF
Operating Temperature Range β€” -55 Β°C to +150 Β°C
MSL Level β€” 1 (per JEDEC J-STD-020)
Automotive Qualified β€” Yes (per Infineon part-number suffix, automotive grade)
Lead-Free β€” Yes
Halogen-Free β€” Yes (per Infineon product family convention)

Datasheets & Resources

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