BSL308PEH6327XTSA1 vs BSL308CH6327XTSA1 비교
다음의 상세 나란히 비교: BSL308PEH6327XTSA1 제조: Infineon 및 BSL308CH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSL308PEH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.21 | $0.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | 2x P-Channel (Dual) | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| 패키지 | PG-TSOP6-6 (TSOT-23-6) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Configuration | Dual, common source | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55 C to +150 C (TJ) | — |
| Automotive Qualification | AEC-Q101 | — |
| 핀 수 | 6 | — |
| Channel Mode | Enhancement | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | — |
| RoHS 상태 | Compliant | Compliant |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| 동작 온도 범위 | — | -55 °C to +150 °C |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |
| 할로겐 프리 | — | Yes (per Infineon product family convention) |