BSL308PEH6327XTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSL308PEH6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSL308PEH6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.21 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| FET Type | 2x P-Channel (Dual) | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | β |
| Continuous Drain Current (ID) | -2 A (Ta) | β |
| Power Dissipation (PD) | 500 mW (Ta) | β |
| Package | PG-TSOP6-6 (TSOT-23-6) | PG-SOT223-4 (TO-261-4) |
| Configuration | Dual, common source | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) | β |
| Automotive Qualification | AEC-Q101 | β |
| Number of Pins | 6 | 3 + thermal tab |
| Channel Mode | Enhancement | Enhancement |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | β |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at TA=25C | β | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | β | 1.8 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | β | -55 C to +150 C (junction) |
| Technology | β | SIPMOS (P-channel MOSFET) |
| MSL Level | β | 1 |
| Packaging | β | Tape & Reel (H6327 suffix) |