BSO150N03MDGXUMA1 vs IRF8736PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSO150N03MDGXUMA1 disebabkan oleh Infineon dan IRF8736PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSO150N03MDGXUMA1 IRF8736PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSO150N03MDGXUMA1 —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS 3M (30V trench MOSFET) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max per channel 9.3 A —
On-State Resistance (RDS(on)) max 15 mOhm at VGS=10V —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) typ 1.0 V —
Power Dissipation (PD) max 1.4 W —
Gambaran Suhu Operasi -55C to +150C -55°C to +150°C (junction)
Kemasan PG-DSO-8 (SO-8 with exposed pad) SO-8 (8-SO)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) 1 (Unlimited)
Status RoHS Compliant —
Channel Configuration Dual N-Channel (independent) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TA=70°C — [DATA_NEEDED: ID at TA=70°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) at VGS=10V — 4.8 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.0 mΩ (typical)
Gate-Source Threshold Voltage VGS(th) — Logic-level (optimized for 5 V drive)
Total Gate Charge Qg — 17 nC (typical)
Maximum Power Dissipation at TA=25°C — 2.5 W
RoHS / Lead-Free — Lead-Free, RoHS3 Compliant
Qualification Standard — JEDEC
Avalanche Rated — Yes (fully characterized avalanche voltage and current)

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