BSP135H6327XTSA1 vs BSP135H6906XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP135H6327XTSA1 disebabkan oleh Infineon dan BSP135H6906XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP135H6327XTSA1 BSP135H6906XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 120 mA —
Power Dissipation (PD) 1.8 W —
On-Resistance RDS(on) max 45 ohm at VGS = 0 V —
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Operating Mode Normally ON (depletion) —
Kemasan PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223, 3+tab)
Jenis Pemasangan Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) SIPMOS (planar high-voltage)
Gambaran Suhu Operasi -55C to +150C (junction, typical) -55C to +150C
Status RoHS Compliant Compliant
Aras MSL 1 1 (unlimited)
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at TA=25C — 120 mA
RDS(on) Max at VGS=0V — 45 Ohm
Power Dissipation (PD) Max — 1.8 W
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(off)) — Depletion mode (normally-on)
Kiraan Pin — 4 (3 leads + drain tab)
Automotive Qualification — AEC-Q101 (per datasheets.com parametric record)
Lead-Free — Yes

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