BSS119NH6327XTSA1 vs BSS123NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS119NH6327XTSA1 disebabkan oleh Infineon dan BSS123NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS119NH6327XTSA1 BSS123NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
FET Technology Enhancement-mode, planar N-channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TA=25°C 190 mA —
Power Dissipation (PD) at TA=25°C 500 mW —
Drain-Source On-Resistance (RDS(on)) max 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] —
Gate Threshold Voltage (VGS(th)) 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] [DATA_NEEDED: typical and max VGS(th)]
Gate Drive Voltage (VGS) ±20 V max —
Kemasan PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] -55 °C to +150 °C (junction)
Qualification AEC-Q101 (automotive grade) AEC-Q101 (automotive)
Status RoHS Compliant —
Lead-Free Yes —
Packaging Tape & Reel (3,000 pcs/reel) —
Aras MSL 1 [DATA_NEEDED: confirm from datasheet] 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
RoHS Compliance — Yes (Pb-free lead plating)

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