BSS119NH6327XTSA1 vs BSS123NH6327XTSA1 比較

詳細並排比較 BSS119NH6327XTSA1 由 Infineon 與 BSS123NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS119NH6327XTSA1 BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon

BSS119NH6327XTSA1 ✓ 啟用中
Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS119NH6327XTSA1 BSS123NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
FET Technology Enhancement-mode, planar N-channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TA=25°C 190 mA —
Power Dissipation (PD) at TA=25°C 500 mW —
Drain-Source On-Resistance (RDS(on)) max 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] —
Gate Threshold Voltage (VGS(th)) 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] [DATA_NEEDED: typical and max VGS(th)]
Gate Drive Voltage (VGS) ±20 V max —
封裝 PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] -55 °C to +150 °C (junction)
Qualification AEC-Q101 (automotive grade) AEC-Q101 (automotive)
RoHS 狀態 Compliant —
Lead-Free Yes —
Packaging Tape & Reel (3,000 pcs/reel) —
MSL 等級 1 [DATA_NEEDED: confirm from datasheet] 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
RoHS Compliance — Yes (Pb-free lead plating)

資料表與資源

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