BSS119NH6327XTSA1 vs BSS126H6327XTSA2 Comparison

Detailed side-by-side comparison of BSS119NH6327XTSA1 by Infineon and BSS126H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS119NH6327XTSA1 BSS126H6327XTSA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
FET Technology Enhancement-mode, planar N-channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TA=25°C 190 mA —
Power Dissipation (PD) at TA=25°C 500 mW —
Drain-Source On-Resistance (RDS(on)) max 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] —
Gate Threshold Voltage (VGS(th)) 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] —
Gate Drive Voltage (VGS) ±20 V max —
Package PG-SOT23 (SOT-23-3) SOT-23-3 (PG-SOT23)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] -55C to +150C (junction, typical)
Qualification AEC-Q101 (automotive grade) —
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Packaging Tape & Reel (3,000 pcs/reel) —
MSL Level 1 [DATA_NEEDED: confirm from datasheet] 1 (per JEDEC J-STD-020)
FET Type — N-Channel Depletion Mode
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
Pin Count — 3
Configuration — Single
Channel Mode — Depletion (normally-on at VGS = 0)
Halogen Free — Yes (Infineon 'green' package)

Datasheets & Resources

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