Infineon

BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon

MPN: BSS123IXTSA1 ✓ Active
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100 V Vdss 190 mA Id 2.4 ohm Rds(on) PG-SOT-23-3 (SOT-23-3) Package
From $0.11 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $0.42 $0.42
10 $0.35 $3.50
100 $0.22 $22.00
500 $0.16 $80.00
1,000 $0.13 $130.00
3,000 $0.11 $330.00
ℹ️ All prices are in USD

Drop-in alternatives for BSS123IXTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSS123I

✅ Drop-In
📦 SOT-23-3
Identical die and SOT-23-3 footprint; base part without -T1 reel suffix (same silicon, identical electrical specs)

📋 Reference alternative (not in catalog)

BSS123NH6327XTSA1

✅ Drop-In
Infineon
📦 SOT-23-3
Infineon Technologies · BSS123NH6327XTSA1 · Active · N-Channel, Enhancement Mode · 100 V · 190 mA (Ta) · 500 mW (Ta) · 6 Ω @ VGS = 10 V

✓ In Stock

$0.085 / Unit

View Datasheet →

VB1106K

✅ Drop-In
📦 SOT-23-3
Pin-to-pin compatible SOT-23-3 N-channel, comparable 100 V VDS and logic-level gate drive; cited in cross-reference data as direct drop-in

📋 Reference alternative (not in catalog)

2N7002L

✅ Drop-In
onsemi
📦 SOT-23-3
N-Channel Enhancement Mode MOSFET · 60 V · 115 mA (Ta) · 7.5 ohm max @ VGS = 5V · +/-20 V · 1 V to 2.5 V · 200 mW (Ta), 225 mW per datasheet · Trench MOSFET, high cell density

✓ In Stock

$0.025 / Unit

View Datasheet →

2N7002L

✅ Drop-In
onsemi
📦 SOT-23-3
N-Channel Enhancement Mode MOSFET · 60 V · 115 mA (Ta) · 7.5 ohm max @ VGS = 5V · +/-20 V · 1 V to 2.5 V · 200 mW (Ta), 225 mW per datasheet · Trench MOSFET, high cell density

✓ In Stock

$0.025 / Unit

View Datasheet →

BSS123IXTSA1 Maximum Ratings & Electrical Characteristics

Transistor Type N-Channel MOSFET
Technology OptiMOS Small-Signal
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) at TA=25C 190 mA
Power Dissipation (PD) at TA=25C 500 mW
RDS(on) (typical, VGS=10 V) 2.4 ohm
RDS(on) (max per family datasheet) 6 ohm
Package PG-SOT-23-3 (SOT-23-3)
Mounting Type Surface Mount
Operating Temperature Range -55C to +150C (per family datasheet)
Qualification Industrial
Configuration Single N-Channel
Lead-Free / RoHS Yes (per distributor listing)
Gate Drive Logic Level Logic-level compatible

BSS123IXTSA1 Pin Configuration

SOT-23 Package Pinout Diagram SOT-23 3-pin surface mount transistor, JEDEC TO-236. Pin 1 by dot. 1 2 3 SOT-23
Pin 1 Gate — MOSFET gate control input; logic-level compatible
Pin 2 Source — MOSFET source terminal; typically tied to circuit ground in low-side switching
Pin 3 Drain — MOSFET drain terminal; switches the load

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for BSS123IXTSA1 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

BSS123IXTSA1 is suitable for 6 applications: Low-Side Switching in Battery Management, Logic-Level Level Shifter 3.3V to 12V, Signal Multiplexing and Analog Switching, LED Driver and Indicator Switch, Relay and Solenoid Driver Stage, IoT Sensor Node Load Switching.

Low-Side Switching in Battery Management

The BSS123IXTSA1 serves as a low-side switch in battery management and protection circuits, where its 100 V VDS rating easily covers 4S to 10S lithium packs (up to 42 V nominal). With 190 mA continuous drain current and 500 mW power dissipation, it can drive fuel-gauge enable lines, LED status indicators, and auxiliary load-disconnect FETs. The 2.4 ohm typical RDS(on) at VGS=10 V keeps conduction loss modest. Designers must observe the SOT-23-3 thermal envelope and use adequate copper pour to keep junction temperature within the -55C to +150C operating range during high-duty-cycle switching.

🔧

Logic-Level Level Shifter 3.3V to 12V

Used as a low-side level translator, the BSS123IXTSA1 accepts 3.3 V GPIO drive from an MCU and switches 12 V loads on its drain. Its logic-level threshold permits direct GPIO connection without a gate driver. The 100 V VDS provides ample margin for 24 V industrial rails. A 100 kohm gate-source pull-down resistor prevents floating-gate turn-on during MCU reset, while the 500 mW dissipation limit keeps the SOT-23-3 package within thermal limits for typical pulse-driven signal lines and small relay coils.

🔬

Signal Multiplexing and Analog Switching

In test and instrumentation equipment, the BSS123IXTSA1 multiplexes low-current analog signals between ADC channels and sensor front-ends. Its low gate charge and fast switching edges support multiplex rates well into the kHz range. The 100 V rating allows switching of higher-voltage transducer outputs when needed. Designers should note that the drain-source capacitance forms an RC network with source impedance, which may introduce settling-time artifacts in high-precision measurement paths.

💡

LED Driver and Indicator Switch

The BSS123IXTSA1 efficiently PWM-drives indicator LEDs, status lamps, and optocoupler input diodes from a microcontroller GPIO. At 190 mA continuous current, it handles most discrete indicator LEDs and optocoupler inputs directly. The 100 V VDS allows driving high-side LED strings in industrial HMI panels. For higher currents or multi-channel LED matrices, designers should consider dedicated LED drivers such as the BTS3011TEATMA1 to offload thermal stress from the small SOT-23-3 footprint.

🔧

Relay and Solenoid Driver Stage

The BSS123IXTSA1 drives small signal relays and solenoids in industrial control and white-goods applications, switching inductive loads on its drain. The 100 V VDS withstands flyback spikes when paired with a flyback diode across the coil. Continuous current of 190 mA covers most sub-miniature signal relays; larger contactors require a higher-current MOSFET or a dedicated smart switch such as the BTS500801TEAAUMA1. Place a TVS or snubber across the drain-source for unclamped inductive loads.

🔧

IoT Sensor Node Load Switching

In battery-powered IoT sensor nodes, the BSS123IXTSA1 enables duty-cycled power to sub-circuits such as environmental sensors, radios, and ADCs, extending battery life through sub-microamp off-state leakage. Its small SOT-23-3 footprint fits space-constrained wearable and smart-home designs. The 100 V VDS rating supports USB-C VBUS hot-swap protection up to 20 V. Pair with a low-quiescent LDO such as the TLE42662GSV33HTMA2 to maintain overall node sleep current below 10 uA.

What is the drain-source voltage rating of BSS123IXTSA1?
The BSS123IXTSA1 has a drain-source voltage (VDS) rating of 100 V. According to the Infineon BSS123I datasheet, this rating makes it suitable for 12 V and 24 V industrial buses, as well as 48 V telecom and PoE peripheral switching. Designers should leave at least 20% derating on VDS for reliable long-term operation in non-clamped inductive environments.
What is the maximum continuous drain current of BSS123IXTSA1?
The BSS123IXTSA1 supports up to 190 mA continuous drain current at TA=25C. Above 25C, the current must be linearly derated using the thermal resistance of the SOT-23-3 package and the 500 mW power dissipation limit. For pulse loads, the safe operating area curve in the Infineon BSS123I datasheet permits higher instantaneous currents within thermal limits.
What is the RDS(on) of BSS123IXTSA1 at 10 V gate drive?
The BSS123IXTSA1 has a typical RDS(on) of approximately 2.4 ohm at VGS=10 V, with a maximum of 6 ohm across the full temperature range. At a logic-level drive of 4.5 V, RDS(on) increases meaningfully; at 2.5 V the device may not fully enhance, so always confirm gate drive headroom against the VGS(th) specification before substituting for a true logic-level MOSFET.
Where can I buy BSS123IXTSA1 online?
As of 2026-09-13, the BSS123IXTSA1 is in stock at authorized distributors including DigiKey (SKU 14321764) and Mouser, with pricing starting near $0.42 per unit at qty 1. Octopart lists 10+ distributors comparing live stock. XAIPART also offers this part with shipping from inventory; lead time for non-stocked quantities is typically 8-12 weeks from Infineon.
What is the price of BSS123IXTSA1 in 1000-piece reels?
As of 2026-09-13, the BSS123IXTSA1 prices at approximately $0.13 per unit at 1000 pieces and $0.11 per unit at 3000 pieces on reel, based on Octopart distributor aggregation. Tape-and-reel packaging of 3000 pieces is the standard factory pack. Volume pricing below $0.10 per unit is typically available only via direct factory quotes above 50k pieces.
What is the lead time for BSS123IXTSA1 orders?
As of 2026-09-13, factory lead time for the BSS123IXTSA1 from Infineon is approximately 8-12 weeks for non-stocked quantities. Distributor stock at DigiKey and Mouser is healthy, with same-day shipping on small-quantity orders. For production volumes above 100k pieces per quarter, XAIPART recommends placing blanket orders 16 weeks in advance to avoid allocation during supply tightening.
BSS123IXTSA1 vs BSS123 - what is the difference?
The BSS123IXTSA1 is the tape-and-reel (-T1) packaging variant of the BSS123I, both manufactured by Infineon with identical silicon and the same SOT-23-3 footprint. The base BSS123I is a 100 V, 190 mA N-channel OptiMOS MOSFET with RDS(on) max of 6 ohm; the original legacy BSS123 from multiple vendors has a different process and slightly higher RDS(on). Pinout and electrical behavior are identical between BSS123I and BSS123IXTSA1.
What is the best drop-in replacement for BSS123IXTSA1?
The best drop-in replacement for the BSS123IXTSA1 is the VB1106K, a pin-to-pin compatible SOT-23-3 N-channel MOSFET referenced in cross-reference data, with comparable 100 V VDS rating and logic-level gate drive. Other same-brand Infineon options in the BSS123 family share the exact SOT-23-3 footprint. Always verify RDS(on) and gate threshold against your circuit's drive voltage before substitution.
Is the BSS123IXTSA1 the same as the BSS123N?
No. The BSS123IXTSA1 is Infineon's OptiMOS small-signal N-channel MOSFET in SOT-23-3 with 100 V VDS and 190 mA ID. The BSS123N is a different part number, often associated with onsemi or other vendors and may have different RDS(on), gate threshold, and package outline. Cross-brand substitutions require careful parametric verification; do not assume identical behavior based on similar naming.
When should I choose BSS123IXTSA1 over a logic-level MOSFET like 2N7002?
Choose the BSS123IXTSA1 over a 2N7002 when your design needs a higher VDS rating (100 V vs 60 V for the 2N7002) or a lower typical RDS(on) at higher gate drive. The 2N7002 remains preferable for low-cost 3.3 V-only switching where 60 V is sufficient. Both share the same SOT-23-3 footprint, enabling PCB drop-in replacement where VDS headroom allows.
What package does BSS123IXTSA1 use and what is the pinout?
The BSS123IXTSA1 uses the industry-standard 3-pin PG-SOT-23-3 surface-mount package. Pin 1 is Gate, pin 2 is Source, and pin 3 is Drain (per the Infineon BSS123I datasheet). The SOT-23-3 footprint is compatible with the 2N7002 and most N-channel small-signal MOSFETs in the same outline, simplifying layout reuse across designs.
Can BSS123IXTSA1 be used for level shifting from 3.3 V to 12 V?
Yes, the BSS123IXTSA1 works well as a low-side level shifter from 3.3 V GPIO to 12 V loads. Drive the gate directly from the 3.3 V MCU pin (with a 100 kohm pull-down to prevent floating). The drain can switch up to 100 V, and the 190 mA continuous current supports most small-signal relays, LEDs, and logic-level translation circuits in industrial and consumer designs.
Where can I download the BSS123IXTSA1 datasheet PDF?
The official BSS123IXTSA1 datasheet (Infineon document covering the BSS123I family) is available as a PDF on Infineon's website at the product folder linked in our data sources. The document is approximately 10 pages, revision 2.1 dated 2021-02-01 per Alldatasheet's metadata. A mirror copy is also available on Alldatasheet for quick reference. Always consult the official Infineon PDF for design-in.
Is the BSS123IXTSA1 RoHS compliant and lead-free?
Yes, the BSS123IXTSA1 is RoHS compliant and lead-free per its DigiKey and Mouser listings, which both explicitly mark the part as compliant with current EU RoHS directives. Infineon's product page for the BSS123I family confirms halogen-free matte-tin plating on the SOT-23-3 leads. REACH compliance is also maintained; conflict-minerals reporting is available on Infineon's website.
What are the key specifications of BSS123IXTSA1 that engineers should know?
The BSS123IXTSA1 is a 100 V N-channel OptiMOS small-signal MOSFET in SOT-23-3 with 190 mA continuous drain current (TA=25C), 500 mW power dissipation, typical RDS(on) of 2.4 ohm at VGS=10 V, and logic-level gate drive capability. According to the Infineon BSS123I datasheet, it is industrial-qualified and supports surface-mount reflow assembly. The part is RoHS compliant and lead-free, with tape-and-reel packaging of 3000 pieces per reel.

Engineering reference data for BSS123IXTSA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the BSS123IXTSA1 when you need a 100 V VDS small-signal N-channel MOSFET in the standard SOT-23-3 footprint for industrial 24 V bus switching, level shifting, or relay/LED driver stages. It is the strongest pick when VDS headroom above 60 V is required, making it more robust than the 2N7002 for 12 V/24 V/48 V systems. For 3.3 V-only low-cost designs where 60 V is sufficient, the 2N7002 remains a lower-cost alternative with comparable current handling. Use the BSS123IXTSA1 instead of higher-current MOSFETs when load current stays below 190 mA and the small SOT-23-3 footprint saves board space; escalate to IPD200N15N3GATMA1 or similar when currents exceed several amps.

Comparison with Alternatives

Parameter This Product BSS123I BSS123 VB1106K 2N7002
Brand Infineon Technologies Infineon Technologies Infineon Technologies [DATA_NEEDED: VB1106K manufacturer] onsemi
Package SOT-23-3 (PG-SOT-23-3) SOT-23-3 - same SOT-23-3 - same SOT-23-3 - same SOT-23-3 - same
Drain-Source Voltage (VDS) 100 V 100 V 100 V 100 V (per cross-reference data) 60 V
Continuous Drain Current (ID) 190 mA 190 mA 190 mA [DATA_NEEDED: ID rating] 200 mA
Power Dissipation (PD) 500 mW 500 mW 500 mW [DATA_NEEDED: PD rating] 350 mW
RDS(on) max @ VGS=10V 6 ohm 6 ohm 6 ohm [DATA_NEEDED: RDS(on) max] 7.5 ohm
Technology OptiMOS Small-Signal OptiMOS Small-Signal Standard N-channel [DATA_NEEDED: process] Standard N-channel
Qualification Industrial Industrial Industrial [DATA_NEEDED: qualification] Industrial

Key Differentiators

  • Higher VDS rating (100 V) versus 2N7002 (60 V) (vs 2N7002 (onsemi))
  • OptiMOS process technology (vs BSS123 (legacy Infineon))
  • Higher power dissipation (500 mW vs 350 mW for 2N7002) (vs 2N7002 (onsemi))

Design Notes

The BSS123IXTSA1 has a power dissipation limit of 500 mW at TA=25C in the SOT-23-3 package. With a typical theta_JA around 357 C/W on a standard JEDEC 1sq-in 1oz copper test board, the device derates linearly to near 0 mW at 150C junction temperature. For continuous loads above 100 mA, attach the SOT-23-3 drain pad (pin 3) to at least 100 sq mm of 1 oz copper pour on both PCB layers to reduce theta_JA below 200 C/W. Estimated: at 100 mA continuous and VDS=10 V, conduction loss is approximately 0.24 W, requiring a heatsink copper pour of 200 sq mm to keep Tj below 100C at 50C ambient.

Use the standard SOT-23-3 land pattern (IPC-7351 nominal footprint) for drop-in compatibility with 2N7002, BSS138, and similar parts. Place a 100 kohm gate-source pull-down resistor within 2 mm of the gate pin to prevent floating-gate turn-on during MCU reset or hot-plug events. Keep the drain trace short and direct to minimize parasitic inductance, especially when switching inductive loads. A small TVS or Schottky flyback diode across the load is recommended for relay or solenoid drive applications.

Do not assume the BSS123IXTSA1 will fully enhance at 2.5 V gate drive - the threshold voltage is typically 1-2 V and RDS(on) is only specified at VGS=10 V. For 3.3 V-only designs, verify that the actual RDS(on) at VGS=3.3 V still meets your load-current budget. Never operate the device above the 100 V VDS rating, even transiently - inductive load spikes can easily exceed VDS and cause avalanche breakdown. For unclamped inductive switching, add a TVS or RC snubber rated below 80% of VDS(max).

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS and lead-free per DigiKey and Mouser distributor listings; REACH and conflict-minerals compliance per Infineon product page. Industrial qualification only - not AEC-Q100 qualified for automotive.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies BSS123IXTSA1 BSS123I BSS123 VB1106K 2N7002 onsemi Diodes Incorporated MOSFET N-channel MOSFET small-signal MOSFET discrete semiconductor OptiMOS SOT-23-3 PG-SOT-23-3 surface mount SMD RDS(on) VGS(th) logic-level MOSFET level shifter low-side switch RoHS REACH industrial qualification
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