BSS123IXTSA1 vs BSS123NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123IXTSA1 disebabkan oleh Infineon dan BSS123NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS123IXTSA1 BSS123NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS Small-Signal —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TA=25C 190 mA —
Power Dissipation (PD) at TA=25C 500 mW —
RDS(on) (typical, VGS=10 V) 2.4 ohm —
RDS(on) (max per family datasheet) 6 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: typical and max VGS(th)]
Kemasan PG-SOT-23-3 (SOT-23-3) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (per family datasheet) -55 °C to +150 °C (junction)
Qualification Industrial AEC-Q101 (automotive)
Configuration Single N-Channel —
Lead-Free / RoHS Yes (per distributor listing) —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Gate Drive Logic Level Logic-level compatible —
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
RoHS Compliance — Yes (Pb-free lead plating)

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