BSS123NH6327XTSA1 vs 2N7002H6327XTSA2 Comparison
Detailed side-by-side comparison of BSS123NH6327XTSA1 by Infineon and 2N7002H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS123NH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.09 | $0.08 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSS123NH6327XTSA1 | β |
| Part Status | Active | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) | 190 mA (Ta) | 300 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| RDS(on) Max | 6 Ξ© @ VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and max VGS(th)] | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage Max (VGS) | Β±20 V | β |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | -55C to +150C (Tj) |
| Qualification | AEC-Q101 (automotive) | Industrial / Commercial Grade |
| RoHS Compliance | Yes (Pb-free lead plating) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS (Planar) |
| On-State Resistance (RDS(on)) | β | 3 ohm max @ VGS = 10 V |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Channel Mode | β | Enhancement |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |