BSS123NH6327XTSA1 vs 2N7002H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS123NH6327XTSA1 dari Infineon dan 2N7002H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS123NH6327XTSA1 2N7002H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) 190 mA (Ta) 300 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] [DATA_NEEDED: VGS(th) typical value]
Gate-Source Voltage Max (VGS) ±20 V —
Paket PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C (junction) -55C to +150C (Tj)
Qualification AEC-Q101 (automotive) Industrial / Commercial Grade
RoHS Compliance Yes (Pb-free lead plating) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS (Planar)
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Channel Mode — Enhancement
Status RoHS — Compliant
Lead-Free — Yes

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