BSS123NH6327XTSA1 vs 2N7002H6327XTSA2 比較

詳細並排比較 BSS123NH6327XTSA1 由 Infineon 與 2N7002H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 啟用中
Infineon
2N7002H6327XTSA2 2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 ✓ 啟用中

規格比較

參數 BSS123NH6327XTSA1 2N7002H6327XTSA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) 190 mA (Ta) 300 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] [DATA_NEEDED: VGS(th) typical value]
Gate-Source Voltage Max (VGS) ±20 V —
封裝 PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55 °C to +150 °C (junction) -55C to +150C (Tj)
Qualification AEC-Q101 (automotive) Industrial / Commercial Grade
RoHS Compliance Yes (Pb-free lead plating) —
MSL 等級 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
電晶體類型 — N-Channel MOSFET
Technology — OptiMOS (Planar)
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Channel Mode — Enhancement
RoHS 狀態 — Compliant
Lead-Free — Yes

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