BSS123NH6327XTSA1 vs 2N7002L Comparison
Detailed side-by-side comparison of BSS123NH6327XTSA1 by Infineon and 2N7002L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS123NH6327XTSA1 | 2N7002L |
|---|---|---|
| Brand | Infineon | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.09 | $0.03 |
| Manufacturer | Infineon Technologies | onsemi |
| Part Number | BSS123NH6327XTSA1 | β |
| Part Status | Active | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) | 190 mA (Ta) | 115 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 200 mW (Ta), 225 mW max |
| RDS(on) Max | 6 Ξ© @ VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and max VGS(th)] | 1 V to 2.5 V |
| Gate-Source Voltage Max (VGS) | Β±20 V | β |
| Package | PG-SOT23 (SOT-23-3) | SOT-23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | β |
| Qualification | AEC-Q101 (automotive) | β |
| RoHS Compliance | Yes (Pb-free lead plating) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Transistor Type | β | N-Channel Enhancement Mode MOSFET |
| On-State Resistance (RDS(on)) | β | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Technology | β | High cell density trench MOSFET |
| Configuration | β | Single FET |
| Switching Performance | β | Fast switching, rugged and reliable |
| Gate Drive | β | 5V logic-level enhancement mode |
| Typical Applications | β | Low-side switching, servo motor control, gate driving, logic-level shifting |
| RoHS Status | β | [DATA_NEEDED: RoHS status] |