BSS126H6327XTSA2 vs SS0530 Comparison

Detailed side-by-side comparison of BSS126H6327XTSA2 by Infineon and SS0530 by Panjit. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSS126H6327XTSA2 SS0530
Brand Infineon Panjit
Category MOSFETs Diodes
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.03
FET Type N-Channel Depletion Mode —
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Package SOT-23-3 (PG-SOT23) SOD-123
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction, typical) —
Pin Count 3 —
Configuration Single Single
Channel Mode Depletion (normally-on at VGS = 0) —
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant (Pb-free matte tin finish)
Lead-Free Yes —
Halogen Free Yes (Infineon 'green' package) —
Manufacturer — Panjit International Inc.
Part Number — SS0530 (ordering code SS0530_R1_00001)
Device Type — Schottky Barrier Diode
Maximum Repetitive Peak Reverse Voltage (VRRM) — 30 V
Maximum DC Blocking Voltage (VR) — 30 V
Maximum Average Rectified Forward Current (IF(AV)) — 0.5 A
Non-Repetitive Peak Forward Surge Current (IFSM) — 5.0 A
Forward Voltage Drop (Vf) — [DATA_NEEDED: Vf at rated IF]
Reverse Leakage Current (IR) — [DATA_NEEDED: IR at rated VR]
Operating Junction Temperature Range — -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet)
Storage Temperature Range — -55 C to +150 C (typical)
Diode Family / Part Series — SS0520-SS0540 (Low-Vf Schottky)
Packaging — Tape and Reel (R1)

Datasheets & Resources

Browse All Products Create BOM Request Quote