BSS126H6327XTSA2 vs SS0530 비교
다음의 상세 나란히 비교: BSS126H6327XTSA2 제조: Infineon 및 SS0530 제조: Panjit. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS126H6327XTSA2 | SS0530 |
|---|---|---|
| 브랜드 | Infineon | Panjit |
| 카테고리 | MOSFETs | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $0.03 |
| FET Type | N-Channel Depletion Mode | — |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at Ta | 21 mA | — |
| Power Dissipation (PD) at Ta | 500 mW | — |
| On-Resistance (RDS(on)) Max | 500 ohm (typical for depletion-mode) | — |
| Gate-Source Voltage (VGS) Range | [DATA_NEEDED: VGS max/min] | — |
| Technology | SIPMOS (DMOS) | — |
| 패키지 | SOT-23-3 (PG-SOT23) | SOD-123 |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +150C (junction, typical) | — |
| 핀 수 | 3 | — |
| Configuration | Single | Single |
| Channel Mode | Depletion (normally-on at VGS = 0) | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| RoHS 상태 | Compliant | Compliant (Pb-free matte tin finish) |
| Lead-Free | Yes | — |
| 할로겐 프리 | Yes (Infineon 'green' package) | — |
| Manufacturer | — | Panjit International Inc. |
| Part Number | — | SS0530 (ordering code SS0530_R1_00001) |
| Device Type | — | Schottky Barrier Diode |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Maximum DC Blocking Voltage (VR) | — | 30 V |
| Maximum Average Rectified Forward Current (IF(AV)) | — | 0.5 A |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 5.0 A |
| Forward Voltage Drop (Vf) | — | [DATA_NEEDED: Vf at rated IF] |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: IR at rated VR] |
| 동작 접합 온도 범위 | — | -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet) |
| Storage Temperature Range | — | -55 C to +150 C (typical) |
| Diode Family / Part Series | — | SS0520-SS0540 (Low-Vf Schottky) |
| Packaging | — | Tape and Reel (R1) |